N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-CHANNEL ENHANCEMENT MODE

文件：236.54 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE

文件：236.54 Kbytes Page：5 Pages

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transisotr The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design,

Programmable Unijunction Transistor (PUT)

Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (P

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages