Dual N-channel Enhancement Mode Power MOSFET

Features VDS= 30V, ID= 9 A RDS(ON)

N-Channel MOSFET uses advanced trench technology

文件：1.43703 Mbytes Page：4 Pages

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：268.45 Kbytes Page：6 Pages

DUAL N-CHANNEL ENHANCEMENT MODE

文件：198.81 Kbytes Page：6 Pages

NYLON HEX STANDOFF

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET®Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822 is Pb-free (meets ROHS & Sony 259 specifications). AO4822L is a Green Product order

30V Dual N-channel MOSFET

文件：304.99 Kbytes Page：6 Pages