N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=18A (VGS = 10V) * RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

High Current Inductive Charge Kit - 5V @ 1.3A max

文件：1.05206 Mbytes Page：3 Pages

N-Channel 30-V (D-S) MOSFET

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Double Coated Foam Tape

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N-Channel 30-V (D-S) MOSFET

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192kHz 24-Bit Stereo ?誇 DAC with 2Vrms Output

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