N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON)

Trench Power MOSFET  (N-CH)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：173.14 Kbytes Page：3 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：173.14 Kbytes Page：3 Pages

DC axial fans

DC axial fans □ 92 x 25 mm

30V P-channel MOS FET

文件：152.04 Kbytes Page：1 Pages

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages