P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：228.25 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：228.25 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：228.25 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：228.25 Kbytes Page：4 Pages

MA MOTION SENSOR

- Reliable detection hardly influenced by reflectivity of targeted objects - Ready-to-use with DC power source (built-in oscillation circuit type) - Capability to adjoin sensors (External triggering type) - RoHS compliant

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages

-2.6A竊?30V P-CHANNEL MOSFET

文件：118 Kbytes Page：5 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages