RECTIFIERS

Standard Recovery, 1 Amp to 2 Amp DESCRIPTION These miniature power rectifiers offer the user extreme reliability for high-rel military supplies. FEATURES • Continuous Rating: to 2A • Controlled Avalanche • Surge Rating: to 30A • PIV: to 1000V • Miniature Package

RECTIFIERS

Standard Recovery, 1 Amp to 2 Amp DESCRIPTION These miniature power rectifiers offer the user extreme reliability for high-rel military supplies. FEATURES • Continuous Rating: to 2A • Controlled Avalanche • Surge Rating: to 30A • PIV: to 1000V • Miniature Package

RECTIFIERS 1 Amp to 2 Amp

RECTIFIERS 1 Amp to 2 Amp Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Standard Rectifier (trr more than 500ns)

This miniature, standard recovery rectifier diode series offers the user extreme reliability for high-reliability applications.  These devices are available in the leaded A package configuration.  Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with v

封装/外壳：A，轴向 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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