P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-

Trench Power MOSFET  (P-CH)

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：251.61 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：251.61 Kbytes Page：4 Pages

Channel style heat sink with folded back fins

Channel style heat sink with folded back fins for increased cooling surface area. Available with tin plated solderable tabs for easy attachment to the printed circuit card.

Active Lowpass Filter

文件：28.33 Kbytes Page：1 Pages

KR Electronics 2321-BNC is a 300 Hz active lowpass filter

文件：45.96 Kbytes Page：2 Pages

How to Use This Catalog

文件：8.73467 Mbytes Page：116 Pages

High Current Toroid Inductors

文件：112.13 Kbytes Page：1 Pages