N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such

N-CHANNEL ENHANCEMENT MODE

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Trench Power MOSFET  (N-CH)

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such

N-CHANNEL ENHANCEMENT MODE

文件：275.55 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：294.45 Kbytes Page：5 Pages

Trench Power MOSFET  (N-CH)

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：294.45 Kbytes Page：5 Pages

N-Channel 20 V (D-S) MOSFET

文件：1.05165 Mbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE

文件：275.55 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：294.45 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE

文件：275.55 Kbytes Page：5 Pages

N-Channel 20 V (D-S) MOSFET

文件：1.05163 Mbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE

文件：275.55 Kbytes Page：5 Pages

8-bit 50MSPS Video A/D Converter with Clamp Function

Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate of 50MSPS. Features • Resolution: 8 bit ± 1/2LSB (DL) • Maximum sampling frequency: 50MSPS •

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.