150A, 30V N-CHANNEL ENHANCEMENT MODE POWER

 DESCRIPTION The UTC UT150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.  FEATURES TO-220 * RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON

Trench Power MOSFET (N-CH)

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM150N30E uses advanced trench technology and design to provide excellent RDS(ON) wit

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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OptiMOS?? Power-Transistor

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OptiMOS?? Power-Transistors

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OptiMOS?? Power-Transistors

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