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UT136G

TRIACS

DESCRIPTION Passivated triac in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic ligh

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UT136G

III Quadrant Triac

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TRIACS

文件:131.67 Kbytes Page:3 Pages

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TRIACS

文件:131.67 Kbytes Page:3 Pages

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TRIACS

文件:131.67 Kbytes Page:3 Pages

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TRIACS

文件:131.67 Kbytes Page:3 Pages

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N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

MOTOROLA

摩托罗拉

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

MOSPEC

统懋

2.5V REFERENCE DIODE

文件:108.67 Kbytes Page:8 Pages

NSC

国半

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件:110.36 Kbytes Page:8 Pages

NSC

国半

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件:110.36 Kbytes Page:8 Pages

NSC

国半

UT136G产品属性

  • 类型

    描述

  • IT(RMS)(A):

    4

  • IGM(A):

    2

  • PG(AV)(W):

    0.5

  • Off-stateID(Leakage)MAX.(mA):

    0.5

  • On-stateVT(V)MAX.:

    1.7

  • On-stateVGT(V)MAX.:

    1.5

  • IH(mA)MAX.:

    30

  • TGT(µs)TYP.:

    2

  • Package:

    TO-220TO-252

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