12 Amps, 100 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it‘ s good at handing high power and current. FEATURES * RDS(ON)

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-Channel MOSFET uses advanced trench technology

文件：1.86795 Mbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：184.93 Kbytes Page：3 Pages

N-CHANNEL POWER MOSFET

文件：184.93 Kbytes Page：3 Pages

N-Channel 100 V (D-S) MOSFET

APPLICATIONS • Primary Side Switch

N-Channel 100 V (D-S) MOSFET

文件：1.68514 Mbytes Page：7 Pages

12A, 100V N-CHANNEL POWER MOSFET

文件：194.56 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：443.06 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.00844 Mbytes Page：7 Pages