N-CHANNEL ENHANCEMENT MODE

The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • VDS(V)=26V \n• I D=110A \n• RDS(ON) =4.8m Ω@VGS=10 V \n• RDS(ON) =7.0mΩ@VGS=4.5 V;

N-CHANNEL ENHANCEMENT MODE

文件：148.86 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE

文件：148.67 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE

文件：148.67 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE

文件：148.67 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE

文件：148.67 Kbytes Page：4 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.02949 Mbytes Page：7 Pages

OptiMOS?? M-Series Power-MOSFET

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N-Channel 30-V (D-S) 175C MOSFET

文件：41.3 Kbytes Page：5 Pages