POWER SCHOTTKY RECTIFIERS

DESCRIPTION This series of 75 Amp rated average forward current series of Schottky barrier power rectifiers in 20 through 50 volt selections is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Microsemi high conductivity design, using a heavy copper top pos

SCHOTTKY RECTIFIERS

MECHANICAL CHARACTERISTICS Case DO-5(R) Marking Alpha-numeric Normal polarity Cathode is stud Reverse polarity Anode is stud (add “R” suffix)

Si Schottky Rectifier Diodes

70A, 45V Power Schottky Rectifier

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

POWER SCHOTTKY RECTIFIERS

文件：135.57 Kbytes Page：3 Pages

POWER SCHOTTKY RECTIFIERS

文件：135.57 Kbytes Page：3 Pages

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：POWER SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

丝印代码：20-；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：21*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：22*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-