SCHOTTKY BARRIER RECTIFIER 0.5 AMP, 40 VOLT

DESCRIPTION In Microsemi’s new Powermite SMT Package, these high efficiency Schottky rectifiers offer power handling capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, Powermite pac

Si Schottky Rectifier Diodes

This UPS540e3 in the Powermite3® package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantage

Si Schottky Rectifier Diodes

This UPS540e3 in the Powermite3® package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantage

5 A Schottky Barrier Rectifier

DESCRIPTION This UPS540e3 in the Powermite3® package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its

Diode and Rectifier Devices

This UPS540e3 in the Powermite3® package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantage

封装/外壳：DO-216AA 包装：管件 描述：DIODE SCHOTTKY 40V 5A POWERMITE 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：Powermite®3 包装：卷带（TR）剪切带（CT）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40V 5A POWERMITE3 分立半导体产品 二极管 - 整流器 - 单

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca