GaAs INTEGRATED CIRCUIT

FEATURES • High gain : GP = 27.0 dB TYP. • Low distortion : OIP3 = +28.5 dBm TYP. • 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)

GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO

文件：269.56 Kbytes Page：8 Pages

GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO

丝印代码：G4W；GaAs INTEGRATED CIRCUIT

FEATURES • High gain : GP = 27.0 dB TYP. • Low distortion : OIP3 = +28.5 dBm TYP. • 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)

封装/外壳：6-SMD，扁平引线 包装：散装 描述：IC AMP BRDCAST RAD 2.32GHZ 6MINI RF/IF，射频/中频和 RFID 射频放大器

GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO

文件：269.56 Kbytes Page：8 Pages

封装/外壳：6-SMD，扁平引线 包装：散装 描述：IC AMP BRDCAST RAD 2.32GHZ 6MINI RF/IF，射频/中频和 RFID 射频放大器

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages