GaAs INTEGRATED CIRCUIT

FEATURES • High isolation : ISL = 30 dB TYP. (D/U-ratio) • Control voltage : Vcont = 0 V/+5 V • Insertion loss : LINS = 8 dB TYP. (ZO = 50 W) • 16-pin plastic HTSSOP package

GaAs INTEGRATED CIRCUIT

FEATURES • High isolation : ISL = 30 dB TYP. (D/U-ratio) • Control voltage : Vcont = 0 V/+5 V • Insertion loss : LINS = 8 dB TYP. (ZO = 50 W) • 16-pin plastic HTSSOP package

Silicon epitaxial planar type

Silicon epitaxial planar type For high speed and high voltage switching, small-power rectification ■ Features • Allowing to insert into a 5 mm pitch hole • High voltage (VR: 200 V) rectification is possible

Silicon Complementary Transistors High Voltage Amplifier & Driver

Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA • High Power Dis

TRANSILTM

DESCRIPTION The SMAJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. The SMA package allows save spacing on high density printed circuit boards. FEATURES ■ PEAK PULSE POWER : 400 W (10/1000µs) ■ STAND OFF VOLTAGE RANGE : From

TRANSILTM

DESCRIPTION The SMAJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. The SMA package allows save spacing on high density printed circuit boards. FEATURES ■ PEAK PULSE POWER : 400 W (10/1000µs) ■ STAND OFF VOLTAGE RANGE : From

TRANSILTM

DESCRIPTION The SMBJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited t