DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

Ultra Low-Noise, High Speed, Wide Band, Dual Operational Amplifier

FEATURES  Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.)  Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 (TYP.)  Slew Rate 7 V/μs (TYP.)  Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.)  Input Offset Voltage ±0.3 mV (TYP.)  Operating Ambient Temperatur

DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

Ultra Low-Noise, High Speed, Wide Band, Dual Operational Amplifier

FEATURES  Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.)  Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 (TYP.)  Slew Rate 7 V/μs (TYP.)  Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.)  Input Offset Voltage ±0.3 mV (TYP.)  Operating Ambient Temperatur

DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

Ultra Low-Noise, High Speed, Wide Band, Dual Operational Amplifier

FEATURES  Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.)  Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 (TYP.)  Slew Rate 7 V/μs (TYP.)  Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.)  Input Offset Voltage ±0.3 mV (TYP.)  Operating Ambient Temperatur

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Ultra low noise : en = 4.5 nV/√Hz • High slew rate : 7 V/μs • High gain bandwidth product : GBW = 15 MHz at 100 kHz • Internal frequency compensation

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Ultra low noise : en = 4.5 nV/√Hz • High slew rate : 7 V/μs • High gain bandwidth product : GBW = 15 MHz at 100 kHz • Internal frequency compensation

DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

Ultra Low-Noise, High Speed, Wideband, Dual Operational Amplifier

Features • Ultra low-noise (f = 1 kHz): 4.5 nV/√Hz (TYP.) • Total harmonic distortion (f = 20 Hz to 20 kHz): 0.002 (TYP.) • High slew rate : 7 V/μs (TYP.) • High gain bandwidth product (f = 100 kHz) : 15 MHz (TYP.) • Input offset voltage : ±0.3 mV (TYP.) • Operating ambient temperature : −40

Ultra Low-Noise, High Speed, Wideband, Dual Operational Amplifier

Features • Ultra low-noise (f = 1 kHz): 4.5 nV/√Hz (TYP.) • Total harmonic distortion (f = 20 Hz to 20 kHz): 0.002 (TYP.) • High slew rate : 7 V/μs (TYP.) • High gain bandwidth product (f = 100 kHz) : 15 MHz (TYP.) • Input offset voltage : ±0.3 mV (TYP.) • Operating ambient temperature : −40

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