5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nit

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nit

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. A

Equalizer Amplifier With ALC

Features • Low noise use. • Wide automatic level control range. • Good reduced voltage characteristics.

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. With the addition of two capacitors and a resistor the devices provide drai

DOUBLE HETEROJUNCTION AIGAAS RED SUNLIGHT VIEWABLE DISPLAYS

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