1.1 GHz AGC AMPLIFIER FOR DBS TUNER AND MOBILE TELEPHONE

DESCRIPTION The µPC2723T is a silicon monolithic integrated circuit designed for miniature AGC amplifier. This amplifier realizes Auto gain control with external control circuit. This IC operates up to 1.1 GHz and therefore is suitable for DBS tuner, mobile telephone and other applications. The

1.1 GHz AGC AMPLIFIER FOR DBS TUNER AND MOBILE TELEPHONE

1.1 GHz AGC AMPLIFIER FOR DBS TUNER AND MOBILE TELEPHONE

DESCRIPTION The µPC2723T is a silicon monolithic integrated circuit designed for miniature AGC amplifier. This amplifier realizes Auto gain control with external control circuit. This IC operates up to 1.1 GHz and therefore is suitable for DBS tuner, mobile telephone and other applications. The

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

1.1 GHz AGC AMPLIFIER FOR DBS TUNER AND MOBILE TELEPHONE

DESCRIPTION The µPC2723T is a silicon monolithic integrated circuit designed for miniature AGC amplifier. This amplifier realizes Auto gain control with external control circuit. This IC operates up to 1.1 GHz and therefore is suitable for DBS tuner, mobile telephone and other applications. The

700 MHz, - 3 dB Bandwidth; Dual SPDT Analog Switch

DESCRIPTION DG2723 is a low RON, high bandwidth analog switch configured in dual SPDT. It achieves 5.5 Ω switch on resistance, greater than 700 MHz -3 dB bandwidth with 5 pF load, and a channel to channel crosstalk at -36 dB and isolation at -29 dB. Fabricated with high density sub micro CMOS pro

700 MHz, -3 dB Bandwidth; Dual SPDT Analog Switch

FEATURES • Wide operation voltage range • Low on-resistance, 5.5 Ω (typical at 3 V) • Low capacitance, 5.6 pF (typical) • -3 dB high bandwidth with 5pF load: 700 MHz (typical) • Low bit to bit skew: 40 pS (typical) • Low power consumption • Low logic threshold: V • Power down protection:

Dome Plugs

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N-Channel 30 V (D-S) MOSFET

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TRANSPARENT BLUE NEMA ENCLOSURE

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