5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional m

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Power gain : GP = 23 dB TYP. @f = 1 GHz • Port impedance : input/output 50 W

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 23 dB T

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional m

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional m

丝印代码：C1E；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 23 dB T

丝印代码：C1E；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Power gain : GP = 23 dB TYP. @f = 1 GHz • Port impedance : input/output 50 W

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION\nThe UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and t • WIDE FREQUENCY RESPONSE: 2.5 GHz\n• HIGH GAIN:23 dB (UPC2709T)\n• SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T)\n• INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE\n• 5 V SINGLE SUPPLY VOLTAGE\n• SUPER SMALL PACKAGE\n• TAPE AND REEL PACKAGING OPTION AVAILABLE;

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：93.59 Kbytes Page：16 Pages

5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：320.16 Kbytes Page：14 Pages

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：416.77 Kbytes Page：13 Pages

BIPOLAR ANALOG INTEGRATED CIRCUITS

文件：470.97 Kbytes Page：13 Pages

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：93.59 Kbytes Page：16 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：IC AMP CEL 2-2.3GHZ 6SUPERMINI RF/IF，射频/中频和 RFID 射频放大器

BIPOLAR ANALOG INTEGRATED CIRCUITS

文件：470.97 Kbytes Page：13 Pages

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：93.59 Kbytes Page：16 Pages

BIPOLAR ANALOG INTEGRATED CIRCUITS

文件：470.97 Kbytes Page：13 Pages

包装：盒 描述：EVAL BOARD FOR UPC2709TB 开发板，套件，编程器 射频评估和开发套件，开发板

丝印代码：E3-；MMIC wideband amplifier

DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50 Ω • Very wide frequency range (3.6 GHz at 3 dB bandwidth) • Flat 23 dB gain (DC to 2.6 GHz at 1 dB fl

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：179.18 Kbytes Page：6 Pages

DUAL HIGH-SPEED FET DRIVER

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