N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING FEATURES • Can be driven by a 2.5-V power source • Low gate cut-off voltage

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

Old Company Name in Catalogs and Other Documents

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Pulse Open Frame P.C. Board Mount

Features Economical, open style, P. C. board pin mount Units are intended for pulse applications including thyristor / triac firing circuits.

Pulse Open Frame P.C. Board Mount

Features Economical, open style, P. C. board pin mount Units are intended for pulse applications including thyristor / triac firing circuits.

Pulse Open Frame P.C. Board Mount

Features Economical, open style, P. C. board pin mount Units are intended for pulse applications including thyristor / triac firing circuits.

Low Profile

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횠6.35mm mounting Black anodised aluminium housing, sealed to IP67

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