MOS FIELD EFFECT TRANSISTOR

Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS

MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR

Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS

MOS FIELD EFFECT TRANSISTOR

Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS

4/6 Wire Ststems Dectectors

2800 Series 4/6 Wire Ststems Dectectors

85 MHz lowpass filter

General Description KR 2806 is a 85 MHz lowpass filter. The filter has a minimum 2 dB bandwidth of 85 MHz. Other center frequencies and bandwidths available. Please consult the factory. Features • Sharp Transition to Stopband • >30 dB Stopband • 50 Ω Source and Load • SMA Connectors

FL SWITCH SFN(T)

Description The FL SWITCH SFN(T)…16(15)(14)TX… range of Factory Line switches can be used for quick and cost-effective Ethernet network expansion to the field level. These unmanaged switches provide simple, robust networking in an industrial environment. Due to the narrow housing design, the swit

Shorty Bushings

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77 Channel CATV Limited Distance Solution (LDS)

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