MOS FIELD EFFECT TRANSISTOR

Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS

MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR

Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS

MOS FIELD EFFECT TRANSISTOR

Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS

Signal Processor and Power Amplifier IC for Telephone Answering Machines

Overview The LA2806M is a one-chip voice signal processing IC for single-mechanism answering machines that incorporates the basic functions required for an answering machine as well as the microcontroller interface and analog switches that are needed in order to control those basic functions. Fe

HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER

DESCRIPTION PS2806-1 and PS2806-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor in a plastic SOP (Small Out-Line Package) for high density applications. This device has a shield effect to cut off ambient light. FEAT

LOW IF WDCT 2.4 GHz TRANSCEIVER

文件：172.48 Kbytes Page：3 Pages

Low Dropout Voltage Regulator with Reset

文件：126.07 Kbytes Page：5 Pages

Low Power, Dual Output, Current Mode PWM Controller

文件：119.18 Kbytes Page：7 Pages