MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2751GR is asymmetrical dual N-Channel MOS Field Effect Transistor designed for DC/DC converters of notebook computers and so on. FEATURES • Asymmetric dual chip type • Low on-state resistance, Low Ciss CH1: RDS(on)2: 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) Ciss = 1040 pF

Power MOSFETs-Power MOSFETs for Automotive

SWITCHING N-CHANNEL POWER MOSFET

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NPN (HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE)

NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE

Power Amplifier and LNA

GENERAL DESCRIPTION The 2751 is a 900 MHz ISM band radio front-end intended for use in half duplex radio applications such as cordless phones and FCC Part 15 compliant devices. It integrates a power amplifier (PA), a Low Noise Amplifier (LNA), Pin Diode drivers for an external transmit/receive sw

900MHz DSSS RF to Digital Transceiver Chipset

Micro Linear has developed a single IC radio, the ML2721. The very high level of integration absorbs all the circuits either difficult to design or those that require production alignment. Adding just an external RF switch makes a complete radio with a digital control interface. On receive, the in

2.4GHz Monolithic Voltage-Controlled Oscillators

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Single Line Ring Generator Controller

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