MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2714GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −3.5 A) RDS(on)2 = 30 mΩ MAX. (VGS = −4.5 V,

SWITCHING P-CHANNEL POWER MOSFET

文件：89 Kbytes Page：8 Pages

Power MOSFETs

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

Low-Voltage Single SPDT Analog Switch

DESCRIPTION The DG2714 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 28 ns, tOFF: 12 ns), low on-resistance (rDS(on): 0.85 Ω) and small physical size (SC70), the DG2714 is ideal for port

Low-Voltage Single SPDT Analog Switch

DESCRIPTION The DG2714 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 28 ns, tOFF: 12 ns), low on-resistance (rDS(on): 0.85 Ω) and small physical size (SC70), the DG2714 is ideal for port

Complementary Switch FET Drivers

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1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

文件：186.35 Kbytes Page：6 Pages

LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER

文件：81.49 Kbytes Page：6 Pages