MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = −10 V, ID = −4.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = −4.5 V,

SWITCHING P-CHANNEL POWER MOSFET

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Power MOSFETs

2.4GHz FHSS Radio Chipset

The 2.4GHz radio chipset is targeted at the IEEE802.11 Frequency Hopping Spread Spectrum standard. Two devices; ML2712 2.4GHz RF Transceiver and the ML2713 IF Transceiver implement a very highly integrated, easy to use radio with a low cost bill of materials. The transmit path includes a DAC and I

ML2713 Radio IF Transceiver

GENERAL DESCRIPTION The ML2713 combined with the ML2712 forms an FSK (Frequency Shift Keying) 2.4 GHz radio chipset for systems based on IEEE802.11 and other wireless communication protocols using the 2.4HGz ISM band. FEATURES ■ Highly integrated IF transceiver ■ Data rates up to 4Mbps ■ Inte

ML2713 Radio IF Transceiver

GENERAL DESCRIPTION The ML2713 combined with the ML2712 forms an FSK (Frequency Shift Keying) 2.4 GHz radio chipset for systems based on IEEE802.11 and other wireless communication protocols using the 2.4HGz ISM band. FEATURES ■ Highly integrated IF transceiver ■ Data rates up to 4Mbps ■ Inte

1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b

1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

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