MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V,

SWITCHING P-CHANNEL POWER MOSFET

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SWITCHING P-CHANNEL POWER MOSFET

2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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TFT Panel Module

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TFT Panel Module

文件：846.51 Kbytes Page：20 Pages

TFT Panel Module

文件：846.51 Kbytes Page：20 Pages