MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2702GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • L

N-Channel 20V (D-S) MOSFET

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SWITCHING N-CHANNEL POWER MOSFET

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SWITCHING N-CHANNEL POWER MOSFET

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 22 Ohm

(-) 10 Volt Precision Reference Series

Features Very High Accuracy : 10,000 Volts +-2.5mV(L and U) 10mA Output Current capability Low Noise Short Circuit Protected The AD2700 family of precision 10 volt references offer the user excellent accuracy and stability at a moderate price by combining the recognized advantag

Lowpass Filter

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2/2 way Angle Seat Valve, manually operated, for media up to 180 °C

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DUAL 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER

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