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型号 功能描述 生产厂家 企业 LOGO 操作
UPA1951

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1951 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V dri

NEC

瑞萨

UPA1951

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1951 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V

RENESAS

瑞萨

Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch

VBSEMI

微碧半导体

Pch Dual Power Mosfet -12V -2.5A 88Mohm 6Pin Tmm/Sc-95

The UPA1951TE is a Pch Dual Power Mosfet -12V -2.5A 88Mohm 6Pin Tmm/Sc-95. • 1.8 V drive available\n• Low on-state resistance RDS(on)1 = 88 mΩ MAX. (VGS = −4.5V, ID = −1.5 A) RDS(on)2 = 114 mΩ MAX. (VGS = −3.0 V, ID = −1.5 A) RDS(on)3 = 133 mΩ MAX. (VGS = −2.5 V, ID = −1.5 A) RDS(on)4 = 234 mΩ MAX. (VGS = −1.8 V, ID = −1.0 A)\n文档文档标题类型日期Attention of Handling Semiconductor ;

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1951 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V dri

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1951 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V

RENESAS

瑞萨

3-Phase Brushless Motor Driver for Portable VCR Capstan Use

Functions • 3-phase full-wave current linear drive system (120 ° voltage linear drive system). • Torque ripple correction circuit built in (overlap correction). • Speed control system using motor supply voltage control. • FG comparator built in. • Thermal shutdown circuit built in.

SANYO

三洋

3-Phase Brushless Motor Driver for Portable VCR Capstan Use

Functions • 3-phase full-wave current linear drive system (120 ° voltage linear drive system). • Torque ripple correction circuit built in (overlap correction). • Speed control system using motor supply voltage control. • FG comparator built in. • Thermal shutdown circuit built in.

SANYO

三洋

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 5V, 1A

Description: The NTE1951 positive voltage regulator features the ability to source 1A of output current with a dropout voltage of typically 0.5V and a maximum of 1V over the entire temperature range. Furthermore, a quiescent current reduction circuit has been included which reduces the ground c

NTE

LM1951 Solid State 1 Amp Switch

文件:171.84 Kbytes Page:10 Pages

NSC

国半

LM1951 Solid State 1 Amp Switch

文件:171.84 Kbytes Page:10 Pages

NSC

国半

UPA1951产品属性

  • 类型

    描述

  • 型号

    UPA1951

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

更新时间:2026-5-15 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas
2016+PB
TSOP-6
7350
RENESAS
16+
TSOP-6
7350
进口原装现货/价格优势!
Renesas
24+
TSOP-6
7350
原装现货假一赔十
NEC
23+
SOT163
8560
受权代理!全新原装现货特价热卖!
NEC
24+
SOT163
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS/瑞萨
23+
SOT-163
50000
原装正品 支持实单
NEC
25+
SOT23-6
41293
NEC全新特价UPA1951TE-T1-A即刻询购立享优惠#长期有货
SOT-163
23+
NA
15659
振宏微专业只做正品,假一罚百!
RENESAS/瑞萨
22+
SC-95
20000
只做原装
RENESAS/瑞萨
2019+
SC-95
78550
原厂渠道 可含税出货

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