N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1900 is a switching device which can be driven directly by a 2.5 V power source. The μPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

Tubular Vitreous Enamelled Wirewound Resistors

General Information Vitreous enamelled wirewound resistors are capable of withstanding a higher dissipation size for size, than any other protected type; this is attributable to the higher operating temperature which the wire and enamel can withstand. Vitreous enamel provides exceptionally good p

Inherent reliability

General Information Vitreous enamelled wirewound resistors are capable of withstanding a higher dissipation size for size, than any other protected type; this is attributable to the higher operating temperature which the wire and enamel can withstand. Vitreous enamel provides exceptionally good p

3M??Value Duct Tape 1900

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TaNFilm짰 Precision DIP Network Commercial and MIL Qualified

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WIRE & CABLE TERMINATION

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