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DESCRIPTION TheµPA1770isaP-channelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofportablemachines. FEATURES •Dualchiptype •Lowon-resistance RDS(on)1=37mΩMAX.(VGS=–4.5V,ID=–3.0A) RDS(on)2=39mΩMAX.(VGS=–4.0V,ID=–3.0A) R

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DESCRIPTION TheµPA1770isaP-channelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofportablemachines. FEATURES •Dualchiptype •Lowon-resistance RDS(on)1=37mΩMAX.(VGS=–4.5V,ID=–3.0A) RDS(on)2=39mΩMAX.(VGS=–4.0V,ID=–3.0A) R

SWITCHINGDUALP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1770isaP-channelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofportablemachines. FEATURES •Dualchiptype •Lowon-resistance RDS(on)1=37mΩMAX.(VGS=–4.5V,ID=–3.0A) RDS(on)2=39mΩMAX.(VGS=–4.0V,ID=–3.0A) R

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Features： ▪Corematerial:Alloypowder ▪Coreandwindingloss: Seehttps://www.codaca.com/DesignTool_Power-Inductor-Loss- Comparison.html ▪Enviromental:RoHS,Reachcompliant,Halogenfree ▪Weight:11.48g ▪MoistureSensitivity:Level(MSL)1 (unlimitedfloorlifeat5～40℃,RH≤70relati

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CONTENTS

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