SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) • Low input capacitance Ciss = 190 pF TY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1759 is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) • Low input capacitance Ciss = 190 pF TYP. •

Power MOSFETs-Power MOSFETs for Automotive

EPITAXIAL PLANAR PNP TRANSISTOR

HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage.

Cortex-M3 based microcontrollers with Ethernet, USB, CAN and 12-bit ADC

32-bit ARM Cortex-M3 MCU; up to 512 kB flash and 64 kB SRAM with Ethernet, USB 2.0 Host/Device/OTG, CAN

Add a Non-Volatile Clock to the MC68HC705J1A

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32-bit ARM Cortex-M3 MCU; up to 512 kB flash and 64 kB SRAM with Ethernet, USB 2.0 Host/Device/OTG, CAN