MOS FIELD EFFECT POWER TRANSISTORS

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOSFET chips in small package • 2.5 V Gate Drive Type and Low On-Resistance RDS(on)1 = 46 mW Max. (VGS =

High-Speed, Low-Voltage, Single-Supply, 0.9廓, Quad SPST Analog Switches

General Description The AS1751/AS1752/AS1753 are high-speed, low-volt age, quad single-pole/single-throw (SPST) analog switches. Fast switching speeds, low ON-resistance, and low power consumption make these devices ideal for single cell battery powered applications. These highly-reliable de

High-Speed, Low-Voltage, Single-Supply, 0.9廓, Quad SPST Analog Switches

General Description The AS1751/AS1752/AS1753 are high-speed, low-volt age, quad single-pole/single-throw (SPST) analog switches. Fast switching speeds, low ON-resistance, and low power consumption make these devices ideal for single cell battery powered applications. These highly-reliable de

High-Speed, Low-Voltage, Single-Supply, 0.9廓, Quad SPST Analog Switches

General Description The AS1751/AS1752/AS1753 are high-speed, low-volt age, quad single-pole/single-throw (SPST) analog switches. Fast switching speeds, low ON-resistance, and low power consumption make these devices ideal for single cell battery powered applications. These highly-reliable de

High-Speed, Low-Voltage, Single-Supply, 0.9, Quad SPST Analog Switches

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Dual Interleaving PWM Controller

文件：658.89 Kbytes Page：28 Pages