MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1744TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Low on-state resistance RDS(on) = 30 mΩ MAX. (VGS = 10 V, ID = 5.0 A) • Lo

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOSFET

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PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

High-Speed, Low-Voltage, Dual, Single-Supply, 4?? SPDT Analog Switches

General Description The AS1744/AS1745 are high-speed, low-voltage, dual single-pole/double-throw (SPDT) analog switches. Fast switching speeds, low ON-resistance, and low power-consumption make these devices ideal for singlecell battery powered applications. Key Features ■ ON-Resistance:

Single Output DC Power Supplies

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DC Power Supplies

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FPGA-enabled Switches

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