MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Single chip type • Low on-state resistance RDS(on)1 = 19 mΩ TYP. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 23 mΩ TYP. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 24 mΩ TYP. (VGS = 4.0 V, ID = 4.5 A) • Low Ciss: Ciss = 1700 pF TYP. • Built-in G-S protectio

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Single chip type • Low On-state Resistance RDS(on)1 = 19 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 23 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 24

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Single chip type • Low on-state resistance RDS(on)1 = 19 mΩ TYP. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 23 mΩ TYP. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 24 mΩ TYP. (VGS = 4.0 V, ID = 4.5 A) • Low Ciss: Ciss = 1700 pF TYP. • Built-in G-S protectio

N-Channel 60-V (D-S) MOSFET

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Power MOSFETs-Power MOSFETs for Automotive

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

Integrated Circuit VIF & SIF Circuit for VCR

Description: The NTE1728 is an integrated circuit in a 30–Lead DIP type package containing the VIF section and SIF on a single chip. Since this device is capable of performing video detection and sound detection independently or simultaneously, it can be applied to various sets from popular typ

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ IMD − 30 dB ■ GOLD METALLIZATION ■ COMM

24-Bit, 96kHz Sampling CMOS Delta-Sigma Stereo Audio DIGITAL-TO-ANALOG CONVERTER

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