MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 70 mW (MAX.) (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 160 mW (MAX.) (VGS = –4 V, ID = –2.0 A) · Low Ciss : Ciss = 840 pF (TYP.) · Built-in G-S protection diode · Small and surface mount package (Power

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 70 mW (MAX.) (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 160 mW (MAX.) (VGS = –4 V, ID = –2.0 A) · Low Ciss : Ciss = 840 pF (TYP.) · Built-in G-S protection diode · Small and surface mount package (Power

Low-Active, 7-Unit, Darlington Transistor Array

Integrated Circuit Record/Playback Circuit for VCR

Description: The NTE1710 is an integrated circuit in a 22–Lead DIP type package designed for tape recorder and VCR audio recording and playback. This device has built–in electronic switches for recording and playback which include the ones for a noise reduction circuit. Features: • Elec

Modulator for GaAs power amplifiers

文件：65.45 Kbytes Page：12 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages