SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Super Low On-Resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4 V, ID = 5.0 A) • Low Ciss Ciss = 2180

MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Super Low On-Resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4 V, ID = 5.0 A) • Low Ciss Ciss = 2180

Customer Specification

Construction Diameters (In) 1) Component 1 1 X 1 COND a) Conductor 24 (10/34) AWG Tinned Copper 0.024 b) Insulation 0.020 Wall, Nom. Polyethylene(PE) 0.064 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 2) Shield Tinned Copper BRAID Shield,90 Coverage, Min. 3) Jacket 0.030 Wall,

5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1702A/ALD1702B/ALD1702/ALD1703 is a monolithic operational amplifier intended primarily for a wide range of analog applications in +5V single power supply and ±5V dual power supply systems as well as +4V to +10V battery operated systems. All device characteristics are s

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