COMPOUND FIELD EFFECT POWER TRANSISTOR

FEATURES · Full Mold Package with 4 Circuits · 4 V driving is possible · Low On-state Resistance RDS(on) = 0.6 W MAX. (VGS = 10 V, ID = 1 A) RDS(on) = 0.8 W MAX. (VGS = 4 V, ID = 1 A) · Low Input Capacitance Ciss = 110 pF TYP.

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full Mold Package with 4 Circuits • 4 V driving is possible • Low On-state Resistance RDS(on) = 0.6 Ω MAX. (VGS = 10 V, ID = 1 A) RDS(on) = 0.8

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full Mold Package with 4 Circuits • 4 V driving is possible • Low On-state Resistance RDS(on) = 0.6 Ω MAX. (VGS = 10 V, ID = 1 A) RDS(on) = 0.8

COMPOUND FIELD EFFECT POWER TRANSISTOR

FEATURES · Full Mold Package with 4 Circuits · 4 V driving is possible · Low On-state Resistance RDS(on) = 0.6 W MAX. (VGS = 10 V, ID = 1 A) RDS(on) = 0.8 W MAX. (VGS = 4 V, ID = 1 A) · Low Input Capacitance Ciss = 110 pF TYP.

Post amplifier for Optical Fiber Communication Receiver

Description The CXB1572Q achieves the 2R optical-fiber communication receiver functions (Reshaping and Regenerating) on a single chip. This IC is also equipped with the signal interruption alarm output function, which is used to discriminate the existence of data input. Features • Auto-offset c

Down Converter Mixer with Fractional-N Frequency Synthesizer and VCO

文件：1.11267 Mbytes Page：35 Pages

Power-down time-stamp function in serial real-time clocks

文件：176.97 Kbytes Page：9 Pages

Guards against accidental disconnection of Computers, PDU’s, Servers and most Network Devices.

文件：5.42821 Mbytes Page：7 Pages

Real Time Video Processor ICs

文件：431.46 Kbytes Page：13 Pages