Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

Silicon NPN epitaxial planar type

K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) . FEATURES ● RF frequency : 24.5 to 26.5 GHz ● Linear gain : ³ 13 dB ● P1dB : ³ 23 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 270 mA

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES