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MUN5212晶体管资料

  • MUN5212别名:MUN5212三极管、MUN5212晶体管、MUN5212晶体三极管

  • MUN5212生产厂家

  • MUN5212制作材料:Si-N+R

  • MUN5212性质:表面帖装型 (SMD)

  • MUN5212封装形式:贴片封装

  • MUN5212极限工作电压:50V

  • MUN5212最大电流允许值:0.1A

  • MUN5212最大工作频率:<1MHZ或未知

  • MUN5212引脚数:3

  • MUN5212最大耗散功率:0.4W

  • MUN5212放大倍数:β>60

  • MUN5212图片代号:H-15

  • MUN5212vtest:50

  • MUN5212htest:999900

  • MUN5212atest:0.1

  • MUN5212wtest:0.4

  • MUN5212代换 MUN5212用什么型号代替

MUN5212价格

参考价格:¥0.1911

型号:MUN5212DW1T1G 品牌:ONSemi 备注:这里有MUN5212多少钱,2026年最近7天走势,今日出价,今日竞价,MUN5212批发/采购报价,MUN5212行情走势销售排行榜,MUN5212报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MUN5212

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

ONSEMI

安森美半导体

MUN5212

丝印代码:8B;NPN Silicon Bias Resistor Transistor

NPN Silicon Bias Resistor Transistor

WEITRON

MUN5212

Bias Resistor Transistor

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

YEASHIN

亚昕科技

MUN5212

BIAS RESISTOR TRANSISTOR NPN SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK

DESCRIPTION This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two res istors; a series base resistor and a base emi

AITSEMI

创瑞科技

MUN5212

NPN 双极数字晶体管 (BRT)

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eli • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant;

ONSEMI

安森美半导体

MUN5212

Digital Transistors (BRT)

文件:140.1 Kbytes Page:12 Pages

ONSEMI

安森美半导体

MUN5212

Digital Transistors (BRT) R1 = 22 k, R2 = 22 k

文件:140.56 Kbytes Page:12 Pages

ONSEMI

安森美半导体

MUN5212

NPN Transistors with Monolithic Bias Resistor Network

文件:149.16 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Dual Bias ResistorTransistors

Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital

YEASHIN

亚昕科技

BIAS RESISTOR TRANSISTOR DUAL NPN WITH MONOLITHIC BIAS RESISTOR NETWORK

DESCRIPTION The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network

AITSEMI

创瑞科技

Surface Mount Dual Bias Resistor Transistor NPN Silicon

Surface Mount Dual Bias Resistor Transistor NPN Silicon

WEITRON

双 NPN 双极数字晶体管 (BRT)

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant;

ONSEMI

安森美半导体

Dual Bias Resistor Transistors

NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to re

WILLAS

威伦电子

Dual Bias Resistor Trasnsistors

Dual Bias Resistor Trasnsistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digit

MOTOROLA

摩托罗拉

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digita

LRC

乐山无线电

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

ONSEMI

安森美半导体

NPN SILICON BIAS RESISTOR TRANSISTORS

Bias Resistor Transistors NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monol

MOTOROLA

摩托罗拉

Bias Resistor Transistor

Digital Transistors (BRT) R1 = 10 kΩ, R2 = 10 kΩ NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolith

ONSEMI

安森美半导体

Surface Mount Dual Bias Resistor Transistor

文件:581.71 Kbytes Page:9 Pages

WEITRON

Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k

文件:155.89 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Dual Bias Resistor Transistors

文件:151.62 Kbytes Page:20 Pages

ONSEMI

安森美半导体

Dual Bias ResistorTransistors

文件:501.15 Kbytes Page:8 Pages

ETL

亚历电子

Digital Transistors

WILLAS

威伦电子

Dual Bias Resistor Transistors

文件:139.52 Kbytes Page:21 Pages

ONSEMI

安森美半导体

Dual Bias Resistor Transistors

文件:139.52 Kbytes Page:21 Pages

ONSEMI

安森美半导体

Dual Bias Resistor Transistors

文件:216.54 Kbytes Page:20 Pages

ONSEMI

安森美半导体

Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k

文件:155.89 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Bias Resistor Transistor

文件:89.91 Kbytes Page:10 Pages

ONSEMI

安森美半导体

NPN SILICON BIAS RESISTOR TRANSISTORS

文件:230.84 Kbytes Page:10 Pages

ONSEMI

安森美半导体

NPN SILICON BIAS RESISTOR TRANSISTORS

文件:230.84 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Bias Resistor Transistor

文件:89.91 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Digital Transistors (BRT)

文件:140.1 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Digital Transistors (BRT) R1 = 22 k, R2 = 22 k

文件:140.56 Kbytes Page:12 Pages

ONSEMI

安森美半导体

封装/外壳:SC-70,SOT-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PREBIAS NPN 50V SC70-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

ONSEMI

安森美半导体

K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) . FEATURES ● RF frequency : 24.5 to 26.5 GHz ● Linear gain : ³ 13 dB ● P1dB : ³ 23 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 270 mA

MITSUBISHI

三菱电机

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES

PHILIPS

飞利浦

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES

PHILIPS

飞利浦

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES

PHILIPS

飞利浦

MUN5212产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    NPN

  • IC Continuous (A):

    0.1

  • V(BR)CEO Min (V):

    50

  • hFE Min:

    60

  • R1 (kΩ):

    22

  • R2 (kΩ):

    22

  • R1/R2 Typ:

    1

  • Vi(off) Max (V):

    0.8

  • Vi(on) Min (V):

    2.5

  • Package Type:

    SC-70-3/SOT-323-3

更新时间:2026-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
SOT-323(SC-70)
3022
原厂订货渠道,支持BOM配单一站式服务
ON
2016+
SOT363
9000
只做原装,假一罚十,公司可开17%增值税发票!
ON/安森美
19+
SOT-363-6
120000
ON
24+/25+
2355
原装正品现货库存价优
原装
25+
SOT323-3
20300
原装特价MUN5212T1G即刻询购立享优惠#长期有货
ON/安森美
2223+
SOT-363
26800
只做原装正品假一赔十为客户做到零风险
ON
22+
SOT-363
20000
ONSemi
26+
SOT-363
5000
十年沉淀唯有原装
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON/安森美
21+
SOT-363
8080
只做原装,质量保证

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