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UN4124晶体管资料

  • UN4124别名:UN4124三极管、UN4124晶体管、UN4124晶体三极管

  • UN4124生产厂家:日本松下公司

  • UN4124制作材料:Ge-P+R

  • UN4124性质:数字电路用 (Digi)

  • UN4124封装形式

  • UN4124极限工作电压:50V

  • UN4124最大电流允许值:0.5A

  • UN4124最大工作频率:<1MHZ或未知

  • UN4124引脚数

  • UN4124最大耗散功率:0.3W

  • UN4124放大倍数

  • UN4124图片代号:NO

  • UN4124vtest:50

  • UN4124htest:999900

  • UN4124atest:0.5

  • UN4124wtest:0.3

  • UN4124代换 UN4124用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
UN4124

UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • New S type package, allowing supply with the radial taping

PANASONIC

松下

UN4124

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • New S type package, allowing supply with the radial taping

PANASONIC

松下

NPN (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR

SAMSUNG

三星

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT4126) ● Ideal for Medium Power Amplification and Switching

TRSYS

Transys Electronics

Amplifier Transistors

Amplifier Transistor NPN Silicon

MOTOROLA

摩托罗拉

24 mm Discrete HFET

24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5 at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

TRIQUINT

Amplifier Transistor(NPN Silicon)

文件:57.14 Kbytes Page:4 Pages

ONSEMI

安森美半导体

UN4124产品属性

  • 类型

    描述

  • 型号

    UN4124

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2026-5-18 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MAT
06+
原厂原装
1251
只做全新原装真实现货供应

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