丝印代码：UN1012N；N-Channel Enhancement Mode MOSFET

Feature SGT MOSFET Technology 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System High power inverter system Industrial and Motor Drive applications

丝印代码：UN1012N；N-Channel Enhancement Mode MOSFET

Feature SGT MOSFET Technology 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System High power inverter system Industrial and Motor Drive applications

丝印代码：UN1012N；N-Channel Enhancement Mode MOSFET

Features Pb-free Lead Plating Extremely Low On-Resistance RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) Applications DC/DC Converter Ideal for High-Frequency Switching and Synchronous Rectification

丝印代码：UN1016N；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

丝印代码：UN1016N；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages