General purpose transistor

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

Multi-Chip TRANSISTOR

FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 150/-150 mA Collector-base voltage V(BR)CBO: 60/-60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

GENERAL PURPOSE TRANSISTOR

DUAL TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc. FEATURES * High DC current gain (NPN: hFE>120 @ VCE=6V, IC=1mA; PNP: hFE>120 @ VCE=-6V,IC=-1m

DUAL TRANSISTOR (NPNPNP)

DUAL TRANSISTOR (NPN+PNP) DESCRIPTION Silicon epitaxial planar transistor FEATURES ● 2SA1037AK and 2SC2412K are housed independently in a package ● Transistor elements independent, eliminating interference ● Mounting cost and area can be cut in half

Dual General Purpose Transistors

Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS

General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

Silicon Epitaxial Planar

FEATURES • 2SA1037AK and 2SC2412K are housed independently in a package. • Transistor elements independent, eliminating interference. • Mounting cost and area can be cut in half.

Dual Transistors

Features • Halogen free available upon request by adding suffix -HF • 2SA1037AK and 2SC2412K are housed independently in a package. • Mounting cost and area can be cut in half. • Transistor elements independent, eliminating interference. • Lead Free Finish/RoHS Compliant (P Suffix designates

General purpose transistor

FEATURES ● Both a 2SA1037AK chip and 2SC2412K chip in SOT-363 package. ● Mounting cost and area can be cut in half. ● Transistor elements are independent,eliminating interference. APPLICATIONS ● NPN/PNP epitaxial planar silicon transistor.

General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

Digital Transistors (Built-in Resistors)

DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independently in a package Transistor elements independent, eliminating interference Mounting cost and area can be cut in half

Dual Transistors

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小信号双极型晶体管

双晶体管

Complex Transistor(BIP+BIP)

GENERAL PURPOSE TRANSISTOR

DUAL TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc. FEATURES * High DC current gain (NPN: hFE>120 @ VCE=6V, IC=1mA; PNP: hFE>120 @ VCE=-6V,IC=-1m

GENERAL PURPOSE TRANSISTOR

DUAL TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc. FEATURES * High DC current gain (NPN: hFE>120 @ VCE=6V, IC=1mA; PNP: hFE>120 @ VCE=-6V,IC=-1m

Complementary Dual General Purpose Amplifier Transistor

Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A − Machine Model: C • Pb−Free Package is Available

Complementary Dual General Purpose Amplifier Transistor

Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A − Machine Model: C • Pb−Free Package is Available

Complementary Dual General Purpose Amplifier Transistor

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200~400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A ESD Rating − Machine Model: C • NSV Prefix f

General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

Dual Transistors

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Silicon Epitaxial Planar Power Management

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GENERAL PURPOSE DUAL TRANSISTOR

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GENERAL PURPOSE DUAL TRANSISTOR

文件：95.7 Kbytes Page：3 Pages

GENERAL PURPOSE DUAL TRANSISTOR

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Complementary Dual General Purpose Amplifier Transistor

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Complementary Dual General Purpose Amplifier Transistor

文件：72.41 Kbytes Page：5 Pages