带手动复位输入的4引脚微处理器电压监测器

UM812是一款低功耗微处理器（μP）监控电路，用于监测微处理器和数字系统中的电源。当该器件与5V或3V供电电路配合使用时，无需外部元件，也不用进行调整，可实现非常可靠的低成本电路。\nUM812仅执行单一功能：每当VCC电源电压下降到预设阈值以下，它们都会输出复位信号，并在VCC上升到复位阈值以上后将该信号保持输出状态至少140ms。此外，还可提供适合各种电源电压的复位阈值。\nUM812有一个推挽输出。UM812有一个高电平有效复位输出RESET，复位比较器旨在忽略VCC的快速瞬变，并确保在VCC低至1V时，输出能够处于正确逻辑状态。\nUM812具有低供电电流，因此非常适合用于便携式设备 - 无需外部元件\n- 电源瞬变抗扰度\n- 确保VCC=1V时的正确逻辑输出\n- 可对3V、3.3V和5V电源进行精确电压监控\n- 供电电流：2μA\n- 最小上电复位脉冲宽度：140ms\n- 工作温度范围内稳定可靠\n- 复位输出配置：高电平有效的推挽复位输出RESET\n- 4引脚SOT143封装\n- 工作温度范围：-40°C至+85°C;

Voltage Monitors with Manual Reset Input

文件：379.22 Kbytes Page：14 Pages

Voltage Monitors with Manual Reset Input

文件：379.22 Kbytes Page：14 Pages

Voltage Monitors with Manual Reset Input

文件：379.22 Kbytes Page：14 Pages

Voltage Monitors with Manual Reset Input

文件：379.22 Kbytes Page：14 Pages

Voltage Monitors with Manual Reset Input

文件：379.22 Kbytes Page：14 Pages

Voltage Monitors with Manual Reset Input

文件：379.22 Kbytes Page：14 Pages

Voltage Monitors with Manual Reset Input

文件：379.22 Kbytes Page：14 Pages

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M