Product Change Notification

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封装/外壳：接线柱 包装：卷带（TR） 描述：SI PPIN HERMETIC STUD 分立半导体产品 二极管 - 射频

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

Dual N-Channel 60 V (D-S) 175 째C MOSFET

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Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages