PIN DIODE

DESCRIPTION The UM4000 and UM4900 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 ser

HF-UHF Medium & High Power PIN Diodes

HIGH POWER PIN DIODES

文件：931.71 Kbytes Page：12 Pages

HIGH POWER PIN DIODES

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Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

封装/外壳：接线柱 包装：卷带（TR） 描述：SI PPIN HERMETIC STUD 分立半导体产品 二极管 - 射频

封装/外壳：接线柱 包装：卷带（TR） 描述：SI PPIN HERMETIC STUD 分立半导体产品 二极管 - 射频

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

Dual N-Channel 60 V (D-S) 175 째C MOSFET

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Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages