ELECTRONIC IGNITION TIMING

FEATURES ■ Improved System Reliability ■ Internal Bypass Mode ■ Constant-Current Drive to Ignition Coil ■ 180 mJ Primary Coil Energy

电子点火正时 (ELECTRONIC IGNITION TIMING)

电子点火正时 (ELECTRONIC IGNITION TIMING)

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages