位置：首页 > IC中文资料第4521页 > UGB8JTHE3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High Voltage Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 |   | ||
High Voltage Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Ultrafast Rectifier • Power pack • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB package)) • Solder dip 275 °C m | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Ultrafast Rectifier • Power pack • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB package)) • Solder dip 275 °C m | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Ultrafast Rectifier 文件：142.81 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE GEN PURP 600V 8A TO263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Voltage Ultrafast Rectifier 文件：142.81 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE GEN PURP 600V 8A TO263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Voltage Ultrafast Rectifier 文件：142.81 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | |
UGB8JTHE3产品属性
- 类型
描述
- 型号
UGB8JTHE3
- 功能描述
整流器 8.0A 600 Volt 25ns 65 Amp IFSM
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
ZOWIE |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
|||
24+ |
SOP20 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
ZOWIE/智威 |
2450+ |
SMD |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Vishay General Semiconductor - |
25+ |
TO-263AB(D?PAK) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
UGCM1203X2P5.5 |
QX |
25 |
只做原装,现货库存 |
||||
ZOWIE |
25+23+ |
SMD |
39452 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ZOWIE智威 |
2016+ |
SMA |
100000 |
普通 |
|||
IXYS |
23+ |
N/A |
12500 |
IXYS全系列在售 |
|||
JohnsonElectric |
新 |
54 |
全新原装 货期两周 |
UGB8JTHE3规格书下载地址
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