100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

ULTRA FAST RECOVERY MODULES

Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant

Silicon Super Fast Recovery Diode

Features • High Surge Capability • Types from 50 V to 600 V VRRM • Non Isolated to plate • Not ESD Sensitive

封装/外壳：TO-249AB 包装：散装 描述：DIODE GEN PURP 200V 50A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列

Super Fast Recovery Rectifiers

Ultrafast Recovery Modules

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POWER TRANSISTORS(60A,200-250V,250W)

60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28 Vol