位置：首页 > IC中文资料第11240页 > UFT100
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UFT100 | ULTRA FAST RECOVERY MODULES Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant | MICROSEMI 美高森美 |   | |
UFT100 | ULTRA FAST RECOVERY MODULES | MICROCHIP 微芯科技 | | |
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Non Isolated to plate • Not ESD Sensitive | GENESIC | | ||
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | | ||
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | | ||
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Non Isolated to plate • Not ESD Sensitive | GENESIC | | ||
ULTRA FAST RECOVERY MODULES Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant | MICROSEMI 美高森美 | | ||
ULTRA FAST RECOVERY MODULES Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant | MICROSEMI 美高森美 | | ||
ULTRA FAST RECOVERY MODULES Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant | MICROSEMI 美高森美 | | ||
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | | ||
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Non Isolated to plate • Not ESD Sensitive | GENESIC | | ||
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Non Isolated to plate • Not ESD Sensitive | GENESIC | | ||
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | | ||
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | | ||
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Non Isolated to plate • Not ESD Sensitive | GENESIC | | ||
ULTRA FAST RECOVERY MODULES Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant | MICROSEMI 美高森美 | | ||
Ultrafast Recovery Modules 文件：217.55 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
Ultrafast Recovery Modules 文件：217.55 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
封装/外壳：TO-249AB 包装：散装 描述：DIODE GEN PURP 100V 50A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
Super Fast Recovery Rectifiers | NAVITAS 纳微半导体 | | ||
Ultrafast Recovery Modules 文件：217.55 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
Ultrafast Recovery Modules 文件：217.55 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
Super Fast Recovery Rectifiers | NAVITAS 纳微半导体 | | ||
封装/外壳：TO-249AB 包装：散装 描述：DIODE GEN PURP 200V 50A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
HIGH SPEED SWITCHING USE INSULATED TYPE HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 100A • VRRM Repetitive peak reverse voltage 600/800/1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA | MITSUBISHI 三菱电机 | | ||
HIGH SPEED SWITCHING USE INSULATED TYPE HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 100A • VRRM Repetitive peak reverse voltage 600/800/1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 100A • VRRM Repetitive peak reverse voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 100A • VRRM Repetitive peak reverse voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con | MITSUBISHI 三菱电机 | | ||
MEDIUM POWER GENERAL USE NON-INSULATED TYPE MEDIUM POWER GENERAL USE NON-INSULATED TYPE •IT (AV) Average on-state current 100A •VRRM Repetitive peak reverse voltage 400V •VDRM Repetitive peak off-state voltage 400V •TRIPLE ARMS •Non-Insulated Type APPLICATION Welders | MITSUBISHI 三菱电机 | |
UFT100产品属性
- 类型
描述
- 型号
UFT100
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
ULTRA FAST RECOVERY MODULES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSC |
23+ |
模块 |
120 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
GeneSiC Semiconductor |
22+ |
TO249AB |
9000 |
原厂渠道,现货配单 |
|||
MSC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
MSC |
25+ |
MODULE |
194 |
就找我吧!--邀您体验愉快问购元件! |
|||
MSC |
23+ |
MODULE |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MSC |
25+ |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
GeneSiC Semiconductor |
25+ |
TO-249AB |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
UFT100规格书下载地址
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