位置:首页 > IC中文资料 > UF803F

型号 功能描述 生产厂家 企业 LOGO 操作
UF803F

ISOLATION ULTRAFAST SWITCHING RECTIFIERS

VOLTAGE RANGE -50 TO 800 VOLTS CURRENT -8.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. Exceeds environmental standards of MILS-19500/228. Low power loss, high efficiency

CHENG-YI

辰頤电子

UF803F

SURFACE MOUNT REVERSE voltage

SURFACE MOUNT REVERSE SUPERFAST RECOVERY RECTIFI VOLTAGE 50 TOER 1000VOLTS FEATURES ‧Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ‧Exceeds environmental standards of MIL-S-19500/228 ‧Low pow

PACELEADER

霈峰

UF803F

ISOLATION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

PANJIT

強茂

UF803F

8.0A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER

Features Glass Passivated Die Construction Ultra-Fast Switching Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O Mechanical Data Case: ITO-220A, Full Molded Plastic Terminals: P

WTE

Won-Top Electronics

UF803F

8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER

Glass Passivated Die Construction Ultrafast 50nS and 100nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

WTE

Won-Top Electronics

UF803F

ULTRAFAST SWITCHING RECTIFIERS VOLTAGE- 50 to 1000 Volts CURRENT - 8.0 Ampere

VOLTAGE- 50 to 1000 Volts CURRENT - 8.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency

YEASHIN

亚昕科技

UF803F

8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER

文件:49.58 Kbytes Page:4 Pages

WTE

Won-Top Electronics

UF803F

Ultra Fast Recovery Rectifier

YEASHIN

亚昕科技

UF803F

Ultrafast Rectifiers

WTE

Won-Top Electronics

UF803F

超快速恢复整流器

PANJIT

強茂

UF803F

ISOLATION ULTRAFAST RECOCVEY RECTIFIERS

文件:430.92 Kbytes Page:2 Pages

PANJIT

強茂

UF803F

ULTRAFAST RECOCVEY RECTIFIERS

文件:105.84 Kbytes Page:2 Pages

PANJIT

強茂

封装/外壳:TO-220-2 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:ULTRA FAST RECOVERY RECTIFIERS 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

MOTOROLA

摩托罗拉

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NEC

瑞萨

UF803F产品属性

  • 类型

    描述

  • IF[A]:

    8

  • VRRM Max.[V]:

    300

  • trr[ns]:

    50

  • IFSM[A]:

    125

  • VF@IF Max.[V]:

    1.3

  • VF@IF Max.[A]:

    8

  • IR@VR Max.[µA]:

    1

  • IR@VR Max.[V]:

    300

  • Package:

    ITO-220AC

更新时间:2026-7-23 17:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANJIT
24+
ITO-220AC
25000
只做原装正品现货 欢迎来电查询15919825718
ON/DIODES/PANJIT
24+
ITO-220AC
43000
PANJIT
17+
TO-220AC
6200

UF803F数据表相关新闻